HJ5210 High Temperature P-Channel Enhanced Power MOSFET
HJ5210 features fast switching speed, low on-resistance, strong current capability, small gate capacitance, and high operating temperature. It can be widely used in high-speed power switches, relay drivers, and general switching applications, as well as DC-DC and DC-AC converters for telecommunications, industrial, and lighting equipment. It can replace IRF5210, and this product has achieved full localization.
隐藏域元素占位
- Product Description
-
- Commodity name: HJ5210 High Temperature P-Channel Enhanced Power MOSFET
- Commodity ID: 1311258003923161088
- 型号: HJ5210
- 产品概述: HJ5210 has characteristics such as fast switching speed, low on-resistance, strong current capability, small gate capacitance, and high operating temperature.
- 驱动持续电流(IC/A): -40
- 击穿电压(VCEO/V): -100
- 工作温度 (TA): -55 to +125
- 关键参数: Ron: 60mΩ
- 封装 (Package): TO-257
HJ5210 features fast switching speed, low on-resistance, strong current capability, small gate capacitance, and high operating temperature. It can be widely used in high-speed power switches, relay drivers, and general switching applications, as well as DC-DC and DC-AC converters for telecommunications, industrial, and lighting equipment. It can replace IRF5210, and this product has achieved full localization.
Product features include:
Gate-source voltage VGS ±20V Drain-source voltage VDS -100V
Continuous current ID (TA=+25℃) -40A Power dissipation PD (TA=+25℃) 200W
(TA=+100℃) -29A Pulse current capability IDM -140A
Operating temperature range TA -55~+175℃ Storage temperature TJ -55~+175℃
Key words:- 驱动
- 开关
- 功率
- 电信
- 使用
- 替代
- 应用于
- 速度快
- 照明设备
- 继电器
previous page