产品&服务
- Picture
- Name
- Model
- Profile
- Key parameter
- Driver persistent current (IC/A)
- Breakdown voltage (VCEO/V)
- Operating Temperature (TA/℃)
- Package
- Attachment
-
- HJ5210 High temperature P-groove enhanced power MOSFET
- Model HJ5210
- Profile HJ5210具有开关速度快、导通电阻低、电流能力强、栅电容小、使用环境温度高等特点
- Key parameter Ron:60mΩ
- Driver persistent current (IC/A) -40
- Breakdown voltage (VCEO/V) -100
- Operating Temperature (TA/℃) -55～+125
- Package TO-257
-
- HJ9435 High temperature P-groove enhanced power MOSFET
- Model HJ9435
- Profile HJ9435具有开关速度快、导通电阻低、电流能力强、栅电容小、使用环境温度高等特点
- Key parameter Ron:80mΩ
- Driver persistent current (IC/A) -5.3
- Breakdown voltage (VCEO/V) 36
- Operating Temperature (TA/℃) -55～+125
- Package TO-257
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