HJ1200-080 Sic MOSFET
隐藏域元素占位
- Product Description
-
- Commodity name: HJ1200-080 Sic MOSFET
- Commodity ID: 1311258007156969472
- 型号: HJ1200-080
- 产品概述: HJ1200-080Sic MOSFET is a high-temperature power device realized using Sic technology.
- 驱动持续电流(IC/A): 25
- 击穿电压(VCEO/V): 1200
- 工作温度 （TA）: -55 to +125
- 关键参数: Ron: 80mΩ
- 封装 （Package）: TO-258
The HJ1200-080 Sic MOSFET is a high-temperature power device made using Sic technology. Sic is an advanced semiconductor material that has hardness similar to diamond and a bandgap width several times that of Si material. The carrier mobility, breakdown voltage, thermal conductivity, and high-temperature characteristics are all far superior to traditional silicon materials. NMOS transistors made from Sic are widely used in high temperature, high pressure, high frequency, high power, radiation resistance, and microwave applications. In the field of oil exploration, it is mainly used for motor drives, high-temperature BUCK-type DC//DC power supplies, and high-frequency transmission. Due to the ultra-wide bandgap energy level, the forward transconductance of NMOS transistors made from Sic is smaller than that of traditional Si materials; therefore, to achieve the rated ID current, a larger gate-source voltage is required. Additionally, to ensure reliable turn-off of the MOS transistor at Tj≥250℃ and to guarantee noise tolerance for low input levels at high temperatures, Sic MOS transistors require a negative bias for turn-off, similar to IGBT transistors. The reliable conduction range for HJ1200-080 is 18V≤VGS≤25V and the reliable turn-off range is -10V≤VGS≤-2V. It uses a TO-258 metal fully sealed package with a heat sink block; the three lead terminals and the shell (heat sink) are insulated from each other for convenient use.
Product features include:
Small input capacitance, capable of high-speed switching with high withstand voltage (≥1200V)
Low on-resistance (RON≤80mΩ) and large output current (≥35A, infinite heatsink)
Can be used in parallel directly without latch-up effect
High gate-source breakdown voltage Tj≥200℃
Key words:- hj1200-080
- 电流
- 输入
- 使用
- 闩锁效应
- 其主要
- 电阻
- 可直接
- 电容
- 特点
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