产品&服务
- Picture
- Name
- Model
- Profile
- Key parameter
- Driver persistent current (IC/A)
- Breakdown voltage (VCEO/V)
- Operating Temperature (TA/℃)
- Package
- Attachment
-
- HJ1200-080 Sic MOSFET
- Model HJ1200-080
- Profile HJ1200-080Sic MOSFET是采用Sic工艺实现的一款耐高温功率器件。
- Key parameter Ron:80mΩ
- Driver persistent current (IC/A) 25
- Breakdown voltage (VCEO/V) 1200
- Operating Temperature (TA/℃) -55～+125
- Package TO-258
-
- HJ540 Sic MOSFET
- Model HJ540
- Profile HJ540 是由先进工艺制成的NMOSFET功率晶体管
- Key parameter Ron:90mΩ
- Driver persistent current (IC/A) 28
- Breakdown voltage (VCEO/V) 100
- Operating Temperature (TA/℃) -55～+125
- Package TO-257
-
- HJ8736 N-MOSFET
- Model HJ8736
- Profile HJ8736具有导通电阻低、电流能力强特点
- Key parameter Ron:0.2mΩ
- Driver persistent current (IC/A) 18
- Breakdown voltage (VCEO/V) 65
- Operating Temperature (TA/℃) -55～+125
- Package CSOP08B
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