Driving circuit
Model | Pressure resistance (V) | Function Description | supply voltage (V) | Logic Input | IO(A) | DT(ns) | Operation temperature (℃) | Packaging form | Alternative models | Alternative methods |
HJ2101 | 600 | Single phase half bridge | 10~20 | HIN/LIN | 0.2/0.3 | 320 | -55℃~125℃ | CSOP08B | IR2101 | In situ substitution |
HJ2102 | 600 | Single phase half bridge | 10~20 | HIN/LIN | 0.2/0.3 | 320 | -55℃~125℃ | CSOP08B | IR2102 | In situ substitution |
HJ2183 | 600 | Single phase half bridge | 10~20 | HIN/LIN | 0.31/0.63 | 560 | -55℃~125℃ | CSOP08B、D08S2 | IR2103、IR2183 | In situ substitution |
HJ2104 | 600 | Single phase half bridge | 10~20 | IN/EN | 0.2/0.3 | 520 | -55℃~125℃ | CSOP08B | IR2104 | In situ substitution |
HJ2110 | 500 | Single phase half bridge | 10~20 | HIN/LIN/EN | 2.5/2.5 | 10 | -55℃~125℃ | D14S2、F16-01 | IR2110 | In situ substitution |
HJ2136 | 600 | Three phase half bridge | 10~20 | HIN/LIN/EN | 0.20/0.35 | 280 | -55℃~125℃ | LCC28、CSOP28 D28L2、CSSOP28 | IR2136 | In situ substitution |
HJ4236 | 600 | Three phase half bridge | 10~20 | HIN/LIN/EN | 0.21/0.36 | 290 | -55℃~125℃ | LCC28、CSOP28 D28L2、CSSOP28 | IR2136 | In situ substitution |
*HJ2233 | 1200 | Three phase half bridge | 10~20 | HIN/LIN/EN | 0.25/0.5 | 250 | -55℃~200℃ | CSOP28 | IR2233 | In situ substitution |
*HJ2130 | 600 | Three phase half bridge | 10~20 | HIN/LIN/EN | 0.20/0.42 | 2500 | -55℃~200℃ | D28L2 | IR2130 | In situ substitution |
HJ4101 | 40 | Half bridge IPM | 18~40 | HIN/LIN | 29 | 560 | -55℃~125℃ | BB483-08A | Self developed | - |
*HJ4201 | 75 | H-bridge IPM | 10~15 | PWM/EN | 5 | 100 | -55℃~175℃ | TO-3、BB483-08A | Self developed | - |
HJG4201 | 75 | H-bridge IPM | 10~15 | PWM/EN | 5 | 100 | -55℃~125℃ | TO-3、BB483-08A | Self developed | - |
HJ4202 | 30 | H-bridge IPM | 6~30 | PWM/EN | 3 | adaptive | -55℃~125℃ | BB483-08A | LMD18200 | Functional substitution |
HJSA12 | 100 | H-bridge IPM | 14~16 | PWM/EN | 10 | 200 | -55℃~125℃ | MO-127 | SA12 | In situ substitution |
HJSA12A | 200 | H-bridge IPM | 14~16 | PWM/EN | 10 | 200 | -55℃~125℃ | MO-127 | SA12 | In situ substitution |
*HJ4301 | 75 | Three phase half bridge IPM | 10~20 | HIN/LIN/EN | 29 | adaptive | -55℃~125℃ | BFP4333-20-U BFP4333-20-D | MSK4301 | In situ substitution |
HJG4301 | 100 | Three phase half bridge IPM | 10~20 | HIN/LIN/EN | 29 | 290 | -55℃~125℃ | BFP4333-20-U BFP4333-20-D | MSK4301 | Functional substitution |
*HJ4306 | 100 | Three phase half bridge IPM | 10~20 | HIN/LIN | 20 | 250 | -55℃~150℃ | BOX3020-22 BB483-22A | Self developed | - |
HJG4306 | 100 | Three phase half bridge IPM | 11~20 | HIN/LIN/EN | 20 | 290 | -55℃~150℃ | BOX3020-22 | Self developed | - |
HJG4306A | 100 | Three phase half bridge IPM | 11~20 | HIN/LIN/EN | 3 | 250 | -55℃~125℃ | DZS2424 | Self developed | - |
*HJ4307 | 100 | Three phase half bridge IPM | 10~20 | HIN/LIN | 3 | - | -55℃~200℃ | BFP3525-30-F-V1 | Self developed | - |
*HJ393A | - | Single channel SiC isolated driver | 5 | PWM | -1 | - | -55℃~200℃ | UP-2222-12B BB483-H | Self developed | - |
HJ393EA | - | Single channel SiC isolated driver | 5 | PWM | 5/-2.5 | - | -55℃~125℃ | UP-2222-12B BB483-H | Self developed | - |
HJ393C | - | Single channel SiC isolated driver | 5 | PWM | 5/-2.5 | - | -55℃~125℃ | UP-2222-12A BB483-H | Self developed | - |
HJ2393 | - | Dual SiC isolated driver | 12 | PWM | 5/-2.5 | - | -55℃~85℃ | DZS2622 | Self developed | - |
*HJ1228 | 1200 | Full bridge resonant inverter circuit | 15~18 | - | 30 | 260 | -55℃~200℃ | BOX8025-9P | Self developed | - |
HJ4424 | - | MOSFET driver | 4.5~24 | INA/INB/EN | 5 | - | -55℃~125℃ | D08S2、CSOP08B | TC4424 | In situ substitution |
HJ4426 | - | MOSFET driver | 4.5~18 | INA/INB | 1.5 | - | -55℃~175℃ | D08S2、F08-06 | TC4426 | In situ substitution |
HJ4427 | - | MOSFET driver | 4.5~18 | INA/INB | 1.5 | - | -55℃~175℃ | D08S2、F08-06 | TC4427 | In situ substitution |
HJ4428 | - | MOSFET driver | 4.5~18 | INA/INB | 1.5 | - | -55℃~175℃ | D08S2、F08-06 | TC4428 | In situ substitution |