Driving circuit

Model
Pressure resistance
(V)
Function Description
supply voltage
(V)
Logic Input
IO(A)
DT(ns)
Operation temperature
(℃)
Packaging form
Alternative models
Alternative methods
HJ2101
600
Single phase half bridge
10~20
HIN/LIN
0.2/0.3
320
-55℃~125℃
CSOP08B
IR2101
In situ substitution
HJ2102
600
Single phase half bridge
10~20
HIN/LIN
0.2/0.3
320
-55℃~125℃
CSOP08B
IR2102
In situ substitution
HJ2183
600
Single phase half bridge
10~20
HIN/LIN
0.31/0.63
560
-55℃~125℃
CSOP08B、D08S2
IR2103、IR2183
In situ substitution
HJ2104
600
Single phase half bridge
10~20
IN/EN
0.2/0.3
520
-55℃~125℃
CSOP08B
IR2104
In situ substitution
HJ2110
500
Single phase half bridge
10~20
HIN/LIN/EN
2.5/2.5
10
-55℃~125℃
D14S2、F16-01
IR2110
In situ substitution
HJ2136
600
Three phase half bridge
10~20
HIN/LIN/EN
0.20/0.35
280
-55℃~125℃
LCC28、CSOP28
D28L2、CSSOP28
IR2136
In situ substitution
HJ4236
600
Three phase half bridge
10~20
HIN/LIN/EN
0.21/0.36
290
-55℃~125℃
LCC28、CSOP28
D28L2、CSSOP28
IR2136
In situ substitution
*HJ2233
1200
Three phase half bridge
10~20
HIN/LIN/EN
0.25/0.5
250
-55℃~200℃
CSOP28
IR2233
In situ substitution
*HJ2130
600
Three phase half bridge
10~20
HIN/LIN/EN
0.20/0.42
2500
-55℃~200℃
D28L2
IR2130
In situ substitution
HJ4101
40
Half bridge IPM
18~40
HIN/LIN
29
560
-55℃~125℃
BB483-08A
Self developed
-
*HJ4201
75
H-bridge IPM
10~15
PWM/EN
5
100
-55℃~175℃
TO-3、BB483-08A
Self developed
-
HJG4201
75
H-bridge IPM
10~15
PWM/EN
5
100
-55℃~125℃
TO-3、BB483-08A
Self developed
-
HJ4202
30
H-bridge IPM
6~30
PWM/EN
3
adaptive
-55℃~125℃
BB483-08A
LMD18200
Functional substitution
HJSA12
100
H-bridge IPM
14~16
PWM/EN
10
200
-55℃~125℃
MO-127
SA12
In situ substitution
HJSA12A
200
H-bridge IPM
14~16
PWM/EN
10
200
-55℃~125℃
MO-127
SA12
In situ substitution
*HJ4301
75
Three phase half bridge IPM
10~20
HIN/LIN/EN
29
adaptive
-55℃~125℃
BFP4333-20-U
BFP4333-20-D
MSK4301
In situ substitution
HJG4301
100
Three phase half bridge IPM
10~20
HIN/LIN/EN
29
290
-55℃~125℃
BFP4333-20-U
BFP4333-20-D
MSK4301
Functional substitution
*HJ4306
100
Three phase half bridge IPM
10~20
HIN/LIN
20
250
-55℃~150℃
BOX3020-22
BB483-22A
Self developed
-
HJG4306
100
Three phase half bridge IPM
11~20
HIN/LIN/EN
20
290
-55℃~150℃
BOX3020-22
Self developed
-
HJG4306A
100
Three phase half bridge IPM
11~20
HIN/LIN/EN
3
250
-55℃~125℃
DZS2424
Self developed
-
*HJ4307
100
Three phase half bridge IPM
10~20
HIN/LIN
3
-
-55℃~200℃
BFP3525-30-F-V1
Self developed
-
*HJ393A
-
Single channel SiC isolated driver
5
PWM
-1
-
-55℃~200℃
UP-2222-12B
BB483-H
Self developed
-
HJ393EA
-
Single channel SiC isolated driver
5
PWM
5/-2.5
-
-55℃~125℃
UP-2222-12B
BB483-H
Self developed
-
HJ393C
-
Single channel SiC isolated driver
5
PWM
5/-2.5
-
-55℃~125℃
UP-2222-12A
BB483-H
Self developed
-
HJ2393
-
Dual SiC isolated driver
12
PWM
5/-2.5
-
-55℃~85℃
DZS2622
Self developed
-
*HJ1228
1200
Full bridge resonant inverter circuit
15~18
-
30
260
-55℃~200℃
BOX8025-9P
Self developed
-
HJ4424
-
MOSFET driver
4.5~24
INA/INB/EN
5
-
-55℃~125℃
D08S2、CSOP08B
TC4424
In situ substitution
HJ4426
-
MOSFET driver
4.5~18
INA/INB
1.5
-
-55℃~175℃
D08S2、F08-06
TC4426
In situ substitution
HJ4427
-
MOSFET driver
4.5~18
INA/INB
1.5
-
-55℃~175℃
D08S2、F08-06
TC4427
In situ substitution
HJ4428
-
MOSFET driver
4.5~18
INA/INB
1.5
-
-55℃~175℃
D08S2、F08-06
TC4428
In situ substitution

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