HJS220 Schottky Barrier Diode
HJS220 is a domestically produced Schottky barrier diode manufactured using silicon epitaxy technology, suitable for high-frequency rectification in low voltage and high current output scenarios, with a recovery time of 45ns.
隐藏域元素占位
- Product Description
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- Commodity name: HJS220 Schottky Barrier Diode
- Commodity ID: 1311258195032428544
- 型号: HJS220
- 产品概述: HJS220 is a domestically produced Schottky barrier diode manufactured using silicon epitaxy technology, suitable for high-frequency rectification in low voltage and high current output scenarios, with a recovery time of 45ns.
- 反向击穿电压（V）: 260
- 正向压降(V): 0.655
- 反向漏电流(μA): 0.01
- 恢复时间(ns): 0.01 45
- 工作温度 （TA/℃）: -55 to +125
- 封装形式 （package）: SMD01
HJS220 is a domestically produced Schottky barrier diode manufactured using silicon epitaxy technology, suitable for high-frequency rectification in low voltage and high current output scenarios, with a recovery time of 45ns.
Main features include:
Ultra-fast recovery time
High current capability
High surge current capability
Low forward voltage drop
Low reverse leakage current
Key words:- HJS220
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