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It has the characteristics of high precision, low pressure difference and high temperature resistance.
    • Picture
    • Name
    • Model
    • Profile
    • Reverse Breakdown Voltage (V)
    • Forward Voltage Drop (V)
    • Reverse Leakage Current (μA)
    • Recovery Time (ns)
    • Operating Temperature (℃)
    • Package
    • Attachment
    • HJ1U××P/HJ1U××NHigh temperature fully sealed high speed rectifier
    • HJ1U××P/HJ1U××NHigh temperature fully sealed high speed rectifier
    • Model HJ1U××P/HJ1U××N
    • Profile HJ1U××P/HJ1U××N主要应用在开关电源和逆变器中,也可作为独立二极管使用。
    • Reverse Breakdown Voltage (V) 200
    • Forward Voltage Drop (V) 1.3
    • Reverse Leakage Current (μA) 10
    • Recovery Time (ns) 25
    • Operating Temperature (℃) -55~+180
    • Package TO-257
    • HJ6510 High temperature SiC schottky barrier diodes
    • HJ6510 High temperature SiC schottky barrier diodes
    • Model HJ6510
    • Profile HJ6510是一款高温SiC肖特基二极管。
    • Reverse Breakdown Voltage (V) 650
    • Forward Voltage Drop (V) 1.67
    • Reverse Leakage Current (μA) 2
    • Recovery Time (ns) 15
    • Operating Temperature (℃) -55~+220
    • Package SMD01
    • HJU1020 High speed full wave rectifier bridge
    • HJU1020 High speed full wave rectifier bridge
    • Model HJU1020
    • Profile HJU1020高速全波整流桥是将高速整流晶体管装配在TO-257F金属全密封外壳内,采用氧化铍(BeO)基片隔离,保证器件具有非常低的热阻,提高了效率和可靠性。
    • Reverse Breakdown Voltage (V) 200
    • Forward Voltage Drop (V) 0.65
    • Reverse Leakage Current (μA) 10
    • Recovery Time (ns) 25
    • Operating Temperature (℃) -55~+200
    • Package TO-257F
    • HJ36510 High speed high power three phase rectifier bridge
    • HJ36510 High speed high power three phase rectifier bridge
    • Model HJ36510
    • Profile HJ36510高速大功率三相全波整流桥是将高速整流SiC管装配在TO-253金属全密封外壳内,采用氧化铍(BeO)基片隔离,保证器件具有非常低的热阻,提高了工作效率和可靠性。
    • Reverse Breakdown Voltage (V) 650
    • Forward Voltage Drop (V) 1.5
    • Reverse Leakage Current (μA) 10
    • Recovery Time (ns) 25
    • Operating Temperature (℃) -55~+220
    • Package TO-253
    • HJ26510 High speed high power full wave rectifier bridge
    • HJ26510 High speed high power full wave rectifier bridge
    • Model HJ26510
    • Profile HJ26510高速大功率全波整流桥是将高速整流SiC管装配在TO-253金属全密封外壳内,采用氧化铍(BeO)基片隔离,保证器件具有非常低的热阻,提高了工作效率和可靠性。
    • Reverse Breakdown Voltage (V) 650
    • Forward Voltage Drop (V) 1.5
    • Reverse Leakage Current (μA) 10
    • Recovery Time (ns) 25
    • Operating Temperature (℃) -55~+220
    • Package TO-253
    • HJS220 Schottky barrier diodes
    • HJS220 Schottky barrier diodes
    • Model HJS220
    • Profile HJS220是一款采用硅外延工艺制造的国产肖特基势垒二极管,适合应用在低电压、大电流输出场合作高频整流,其恢复时间为45ns。
    • Reverse Breakdown Voltage (V) 260
    • Forward Voltage Drop (V) 0.655
    • Reverse Leakage Current (μA) 0.01
    • Recovery Time (ns) 0.01 45
    • Operating Temperature (℃) -55~+125
    • Package SMD01
    • HJ42125High temperature dual output positive voltage precision voltage regulator
    • HJ42125High temperature dual output positive voltage precision voltage regulator
    • Model HJ42125
    • Profile HJ42125是一种应用于高温环境下的低压差输出精密稳压器,由整流桥电路、高性能运算放大器、功率调整管、基准电压源、保护网络等组成。
    • output voltage (Vo/V) 5/10(6/12)(9/18)(12/24)
    • Maximum Output Current (Io) 1A
    • Input Volatge (Vi/V) 30V
    • Voltage Regulation Factor (SV) 20mV
    • Current Regulation Factor (Sɪ) 30mV
    • Minimum input/output differential pressure (△Vmin/V) 2.0V
    • Quiescent Current (IQ/mA) 6mA
    • Operating Temperature (TA/℃) -55~+200℃
    • Package BB483-08
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