HJ393A/B/C high temperature resistant SiC-MOSFET/IGBT isolated driver

HJ393A/B/C is a high-temperature resistant SiC-MOSFET/IGBT isolated driver, which includes DC/DC drive, transformer, rectification and filtering, high-speed digital isolation, and gate driver to achieve single power supply +5V. The circuit internally generates isolated VCC (+13V to +20V) positive power supply voltage and VEE (-3V to -6V) negative power supply voltage. Depending on the frequency of the input PWM signal, it is divided into three levels: A, B, C. HJ393A can convert a maximum of 800KHz PWM signal with a duty cycle of 0-100% at TTL/CMOS level into an isolated driving signal from VCC to VEE; HJ393B can convert a maximum of 800KHz PWM signal with a duty cycle of 0-100% at TTL/CMOS level into an isolated driving signal from VCC to VEE; HJ393C can convert a maximum of 1MHz PWM signal with a duty cycle of 0-100% at TTL/CMOS level into an isolated driving signal from VCC to VEE. Due to the ultra-wide bandgap energy level, the forward transconductance of NMOS made from SiC material is smaller than that made from traditional Si material. Therefore, in order to achieve the rated ID current, a larger gate-source voltage is required. Additionally, to ensure that the MOSFET can reliably turn off at Tj ≥ 250℃ and reduce the Miller effect of SiC-MOSFETs while ensuring noise tolerance for low-level input under high temperatures, SiC MOSFETs require a negative bias for turn-off, similar to IGBT devices. This device meets the requirements for driving SiC-MOSFETs/IGBTs and ensures reliable conduction and turn-off of SiC-MOSFETs/IGBTs. Its maximum transient peak drive current is 4A and it has high isolation and anti-interference capabilities, ensuring reliable operation under high-frequency PWM signals and high voltages.

　　Main features include:

　　Built-in DC/DC isolated power supply, the system only needs to provide a digital 5V for 1800VDC peak isolation.

　　High common-mode transient immunity: CMTI ≥ 50KV/μS, maximum operating temperature can reach 200℃.

　　Can achieve negative voltage shutdown input and output signal isolation for IGBT/SiC-MOS transistors.

　　Fast charge and discharge time, short delay time: (tr, tf ≤ 50nS) for 0-100% duty cycle applications, suitable for high voltage and high power switch applications.

　　Maximum operating frequency HJ393A: 500KHz; HJ393B: 800KHz; HJ393C: 1MHz.

　　Transient peak drive current HJ393A: ±9A; HJ393B: -2.5A/+5A; J393C: ±1.5A.

• igbt
• 隔离
• hj393b
• hj393a
• 应用
• 峰值
• 最高
• dc
• 充放电
• 频率