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HJ2SD2396 power transistor

HJ2SD2396是NPN型功率晶体管,常用于低频功率放大器,具有高直流电流增益和低集电极饱和电压的特点。

The category: N-P-N Triode



Product overview

常用于低频功率放大器,具有高直流电流增益和低集电极饱和电压的特点。


 

Keyword:
功率
电流
直流
功率放大器
集电极
增益
用于
具有
电压
低频


HJ2SD2396 power transistor

HJ2SD2396是NPN型功率晶体管,常用于低频功率放大器,具有高直流电流增益和低集电极饱和电压的特点。
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Model:
HJ2SD2396
Key parameter:
fT:5MHz
Driver persistent current (IC/A):
6
Breakdown voltage (VCEO/V):
60
Operating Temperature (TA/℃):
-55~+125
Package:
TO-257
Profile:

HJ2SD2396是NPN型功率晶体管

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Keyword:
功率
电流
直流
功率放大器
集电极
增益
用于
具有
电压
低频
1
Product description
Parameters

常用于低频功率放大器,具有高直流电流增益和低集电极饱和电压的特点。


 

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HJ2SD2396 power transistor
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