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Drive
It has the characteristics of redundancy fault-tolerant design to eliminate single point of failure mode, high voltage and high current driving capability, high temperature resistance and so on.
    • Picture
    • Name
    • Model
    • Profile
    • Key parameter
    • Driver persistent current (IC/A)
    • Breakdown voltage (VCEO/V)
    • Operating Temperature (TA/℃)
    • Package
    • Attachment
    • HJ2SD718(NPN) bipolar transistor
    • HJ2SD718(NPN) bipolar transistor
    • Model HJ2SD718
    • Profile HJ2SD718(NPN)晶体管主要用于音频功率放大,大负载驱动电路,中大容量,开关电路,自动控制电路等
    • Key parameter fT:10MHz
    • Driver persistent current (IC/A) 0.5
    • Breakdown voltage (VCEO/V) 120
    • Operating Temperature (TA/℃) -55~+125
    • Package B-3D
    • HJBD137(NPN) Small signal amplifier transistor
    • HJBD137(NPN) Small signal amplifier transistor
    • Model HJBD137
    • Profile HJBD137(NPN)/HJBD138(PNP)是小信号放大器晶体管
    • Key parameter fT:60MHz
    • Driver persistent current (IC/A) 2
    • Breakdown voltage (VCEO/V) 60
    • Operating Temperature (TA/℃) -55~+125
    • Package B-3D、TO-46
    • HJ41C(NPN low-frequency power transistor
    • HJ41C(NPN low-frequency power transistor
    • Model HJ41C
    • Profile HJ41C(NPN)晶体管主要用于音频功率放大,大负载驱动电路,中大容量,开关电路,自动控制电路等
    • Key parameter fT:3MHz
    • Driver persistent current (IC/A) 6
    • Breakdown voltage (VCEO/V) 100
    • Operating Temperature (TA/℃) -55~+125
    • Package F1
    • HJ3DD4C(NPN) low-frequency power transistor
    • HJ3DD4C(NPN) low-frequency power transistor
    • Model HJ3DD4C
    • Profile HJ3DD4C(NPN)晶体管主要用于音频功率放大,大负载驱动电路,中大容量,开关电路,自动控制电路等
    • Key parameter fT:28MHz
    • Driver persistent current (IC/A) 3
    • Breakdown voltage (VCEO/V) 150
    • Operating Temperature (TA/℃) -55~+125
    • Package F1
    • HJ2XN203(NPN)/ HJ2XP203(PNP)low-frequency power transistor
    • HJ2XN203(NPN)/ HJ2XP203(PNP)low-frequency power transistor
    • Model HJ2XN203
    • Profile HJ2XN203(NPN)/ HJ2XP203(PNP)晶体管主要用于音频功率放大,大负载驱动电路,中大容量,开关电路,自动控制电路等
    • Key parameter fT:10MHz
    • Driver persistent current (IC/A) 1.5
    • Breakdown voltage (VCEO/V) 230
    • Operating Temperature (TA/℃) -55~+125
    • Package F1
    • HJ2SD2396 power transistor
    • HJ2SD2396 power transistor
    • Model HJ2SD2396
    • Profile HJ2SD2396是NPN型功率晶体管
    • Key parameter fT:5MHz
    • Driver persistent current (IC/A) 6
    • Breakdown voltage (VCEO/V) 60
    • Operating Temperature (TA/℃) -55~+125
    • Package TO-257
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