MOSFET

Model number
N-CH/P-CH
V DSS /Min
(V)
V GS (th)
(V)
I DSS /Max
(uA)
I GSS /Max
(uA)
I D /Max
(A)
R DS(on) /Max
(Ω)
Operating temperature
(℃)
Package type
Alternative model
Alternative method
HJ540
N-CH
100
2.0~4.0
25
0.1
28
0.09
-55℃~200℃
TO-257
SMD-0.5
IRF540
In-situ substitution
HJ1N60
N-CH
600
2.0~4.0
10
0.1
1.2
11.5
-55℃~200℃
TO-46
1N60
In-situ substitution
HJ2N7225
N-CH
200
2.0~4.0
10
0.1
40
0.1
-55℃~125℃
TO-254B
2N7225
In-situ substitution
HJ04N37
N-CH
45
1.0~2.4
1
0.1
37
0.05
-55℃~125℃
CSOP08B
SIR450DP
In-situ substitution
HJ06N10
N-CH
60
1.5~2.5
10
0.1
10
0.03
-55℃~125℃
SOT-23A
DMT616MLSS
In-situ substitution
HJ08N09
N-CH
80
2.0~4.0
1
0.1
85
0.012
-55℃~125℃
SMD-1
IPD053N08N3
In-situ substitution
HJ10N02
N-CH
100
2.0~4.0
5
0.1
308
0.005
-55℃~125℃
SMD-1
TO-258
TRFP4468
In-situ substitution
HJ10N16
N-CH
100
2.0~4.0
1
0.15
16
0.1
-55℃~125℃
SMD-0.5
STP14NF10
In-situ substitution
HJ10N60
N-CH
100
2.0~4.0
1
0.1
60
0.05
-55℃~125℃
SMD-1
SMD-0.5
IPD60N10S4-12
In-situ substitution
HJ20N32
N-CH
200
2.0~4.0
1
0.1
40
0.05
-55℃~125℃
SMD0.5
STB40NF20
In-situ substitution
HJ65N28
N-CH
650
2.5~4.5
1
0.1
15
0.56
-55℃~125℃
TO-257
SMD-0.5
IPW65R155CFD7
In-situ substitution
HJ80N05
N-CH
800
3.0~4.0
1
0.1
5
2.8
-55℃~125℃
TO-252-3L
STD7LN80K5
In-situ substitution
HJ140M
N-CH
100
2.0~4.0
25
0.1
28
0.077
-55℃~125℃
TO-254D
IRF140
In-situ substitution
HJ260
N-CH
200
2.0~4.0
25
0.1
28
0.068
-55℃~150℃
TO-254
IRFM260
In-situ substitution
HJ4946
N-CH
60
1.0~3.0
1
0.1
6.5
0.041
-55℃~125℃
CSOP08B
SE4946
In-situ substitution
HJ8736
N-CH
30
1.35~2.35
1
0.1
18
0.0048
-55℃~125℃
CSOP08B
IRF8736
In-situ substitution
HJ640
N-CH
200
2.0~4.0
25
0.1
18
0.18
-55℃~125℃
TO-257
SMD-0.5
IRF640
In-situ substitution
HJ6620
N-CH
200
2.0~4.0
25
0.1
5
1.2
-55℃~125℃
TO-257
IRF6620
In-situ substitution
HJM350
N-CH
400
2.0~4.0
25
0.1
14
0.315
-55℃~125℃
TO-254
IRFM350
In-situ substitution
HJ1200-080
N-CH (SiC)
1200
1.7
100
0.25
35
0.11
-55℃~200℃
TO-258
SMD-2
CPM3-1200-0075A
In-situ substitution
HJ05P01
P-CH
-45
2.0~5.0
1
0.5
10
50
-55℃~125℃
B-3D-4L
IRF7240
Functional substitution
HJ10P50
P-CH
-100
1.2~2.5
1
0.1
30
0.1
-55℃~125℃
TO-257
SMD-0.5
FX30KMJ-2
In-situ substitution
HJ10P95
P-CH
-100
1.2~2.5
1
0.1
18
0.15
-55℃~125℃
TO-257
SMD-0.5
SPP15P10P
In-situ substitution
HJ27P20
P-CH
-250
2.0~4.0
10
0.1
20
0.2
-55℃~125℃
TO-254B
IXTR48P20P
In-situ substitution
HJ60P20
P-CH
-60
1.0~2.5
1
0.1
20
0.05
-55℃~125℃
TO-254B
NTTFS5116PL
Functional substitution
HJ9110
P-CH
-100
2.0~4.0
100
0.1
1
1.2
-55℃~200℃
TO-46
IRF9110
In-situ substitution
HJ9435
P-CH
-30
1.0~3.0.
1
0.1
5.3
0.08
-55℃~200℃
SO-23A
CSOP08B
NDT452AP
In-situ substitution
HJ5210
P-CH
-100
2.0~4.0
25
0.1
40
0.06
-55℃~175℃
TO-257
IXTT50P10
In-situ substitution
HJ5305
P-CH
-60
1.2~2.5
25
0.1
31
0.06
-55℃~125℃
SMD-1
CSOP08B
IRF5305
In-situ substitution

  Non-domestic product models are marked with an asterisk (*).

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