HJ823C micro-packaged high temperature power amplifier
隐藏域元素占位
- Product Description
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- Commodity name: HJ823C micro-packaged high temperature power amplifier
- Commodity ID: 1311258256307015680
- 型号: HJ823C
- 产品概述: HJ823C is a micro-packaged high-temperature power amplifier with a voltage gain of 1.
- 电源电压 （VDD/V）: ±10V to ±30V
- 带宽 （GBWP/MHz）: 4
- 工作电流 （IQ）: 5mA
- 失调电压 （VOS）: 5mV
- 偏置电流 （IIB）: 500nA
- 压摆率 （SR）: 1 V/us
- 工作温度 （TA）: -55℃ to 200℃
- 封装 （Package）: F08-04A
HJ823C is a micro-packaged high-temperature power amplifier with a voltage gain of 1. It is realized using an improved thick film integration process, overcoming the disadvantages of large parasitic effects and high leakage in monolithic integration, thus avoiding the occurrence of the 'purple spot' effect. It features a wide frequency band, large output swing, and a broad operating temperature range, making it suitable for power amplification in conjunction with general linear and nonlinear components. It can be used as a voltage integrator, combination amplifier, or circuit terminal driving power amplifier. This product can be widely applied in various automatic control, communication, and exploration equipment and can operate stably for long periods in high-temperature environments up to 180°C.
Main features include:
Power supply voltage ±30V MaximumOutput current ±500mA
Operating environmentTemperature range -55~+200℃Lead soldering temperature (10s)+300℃
Dissipated power 1.6W(Ceramic dual in-line package)
600mW(F08-04(package)
Key words:- HJ823C
- 微封装高温功率放大器
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