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HJ198P high temperature five PNP transistor array

HJ198P is a transistor array integrated circuit composed of five PNP silicon transistors. Among them, two transistors are connected through internal leads to form a differential pair, which can be used as high-performance discrete transistors in general circuits or as a specialized transistor array. Special processing techniques and selected chips ensure that the transistor array has good electrical performance matching, good thermal performance matching, and excellent channel isolation (channel insulation resistance greater than 10¹⁰Ω). This circuit uses a 14-pin ceramic flat package with an operating temperature range of -55 to +200℃, and it can be interchanged with 198HT5/198HT6/198HT7/198HT8.

隐藏域元素占位

  • Product Description
    • Commodity name: HJ198P high temperature five PNP transistor array
    • Commodity ID: 1311258015071621120
    • 型号: HJ198P
    • 产品概述: HJ198P is a transistor array integrated circuit composed of five PNP silicon transistors.
    • 驱动持续电流(IC/A): 0.4
    • 击穿电压(VCEO/V): 45
    • 工作温度 (TA): -55 to +125
    • 关键参数: fT:200MHz
    • 封装 (Package): F16-01C

    HJ198P is a transistor array integrated circuit composed of five PNP silicon transistors. Among them, two transistors are connected through internal leads to form a differential pair, which can be used as high-performance discrete transistors in general circuits or as a specialized transistor array. Special processing techniques and selected chips ensure that the transistor array has good electrical performance matching, good thermal performance matching, and excellent channel isolation (channel insulation resistance greater than 10¹⁰Ω). This circuit uses a 14-pin ceramic flat package with an operating temperature range of -55 to +200℃, and it can be interchanged with 198HT5/198HT6/198HT7/198HT8.

      Main features include:

      Single tube breakdown voltage BVCEO -50V

      Single tube drive current IEM 400mA

      Operating temperature range -55~+200℃

      Dissipated power 600mW

      Storage temperature -55~+200℃

      Using F14-01C ceramic flat package

     

     

    Key words:
    • 阵列
    • 使用
    • 通道
    • 晶体管
    • 性能
    • 良好
    • 匹配
    • 大于
    • 分立
%E7%AC%AC%E4%B8%80%EF%BC%8C%E6%9C%80%EF%BC%8C%E4%BC%98%E7%A7%80%EF%BC%8C%E5%A2%9E%E5%BC%BA%EF%BC%8C%E4%B8%80%E6%B5%81%EF%BC%8C%E5%8D%93%E8%B6%8A%EF%BC%8C%E9%A2%86%E5%85%88%EF%BC%8C%E5%85%88%E8%BF%9B%EF%BC%8C%E5%BC%95%E9%A2%86

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