Shaanxi Hangjing Microelectronics develops a series of SiC MOSFET products

Release time:

2016-03-28

The energy band and high-temperature stability of SiC materials give them unparalleled advantages in high-temperature semiconductor devices. Components made from SiC materials, such as MESFETs, MOSFETs, JFETs, and BJTs, can operate at temperatures exceeding 500°C, providing electronic systems that work in extreme environments and are widely used in military weapon systems, aerospace, and oil geological exploration. N-MOS transistors made from SiC materials have the following characteristics: low on-resistance (Ron) → low static loss; small gate capacitance (Ciss) and gate charge (Qgs) → low dynamic loss.

　　The energy band and high-temperature stability of SiC materials give them unparalleled advantages in high-temperature semiconductor devices. Components made from SiC materials, such as MESFET, MOSFET, JFET, and BJT, can operate at temperatures above 500°C, providing electronic systems that work in extreme environments and are widely used in military weapon systems, aerospace, and oil geological exploration.
　　N-MOS transistors made from SiC materials have the following characteristics:
　　Low on-resistance (Ron) → low static loss;
　　Small gate capacitance (Ciss) and gate charge (Qgs) → low dynamic loss, suitable for high-frequency applications;
　　Large bandgap → Tj≥+300°C, BVDSS≥1200V, small gfs;
　　No latch-up effect;
　　Can be directly paralleled for use;
　　Strong resistance to γ radiation;
　　Widely applicable to: three-phase brushless motor drives
　　Wide input range Buck-DC/DC
　　High-frequency DC/AC drives
　　High-frequency transmission units
　　In response to current domestic and international market demands, Shaanxi Hangjing Microelectronics Co., Ltd. has developed a series of SiC devices to fill the domestic gap in this area.
　　1.HJ1200-080: 1200V/35A/TO-258 package
　　2.HJ1200-160: 1200V/20A/TO-258 package
　　(Can be processed into TO-3 or SMD-2 packages according to user requirements)
　　3.HJ12B28A: 1200V/28A three-phase brushless motor driver
　　4.HJ12B48A: 1200V/48A three-phase brushless motor driver
　　SiC-MOS power transistors face the following issues when applied at high temperatures:
　　1. The forward transconductance (gfs) is inherently small and decreases further at high temperatures;
　　2. The threshold voltage (VGS(th)) drops rapidly at high temperatures, making it difficult to turn off at zero volts or unable to turn off.
　　'Therefore, driving SiC-MOS power transistors must have:'
　　'1. Appropriately increase the gate-source voltage VGS when turning on the transistor to reduce on-resistance (Ron), thereby reducing static loss;'
　　'2. Apply negative bias to the gate-source when turning off the transistor to ensure complete turn-off;'
　　'3. Increase the gate-source charge/discharge current to reduce switching losses and thus decrease dynamic losses.'
　　'Hangjing Microelectronics' patented product HJ393 comprehensively solves the driving problem of SiC-MOS transistors. It has the following features: built-in DC/DC conversion from +5V to +18V and -5V'
　　'Input/output electrical isolation:'
　　'1400V DC isolation voltage;'
　　'CMTI≥50KV/µs;'
　　'Output peak drive current ≥±1.5A, tr/tf≤50ns;'
　　'Can accept PWM signals with a duty cycle of between %0~100;'
　　'Can achieve negative voltage turn-off for SiC-MOS/IGBT;'
　　'fmax≥1MHz, tw≥100ns;'
　　'Small size:22x22x5.5mm.'

Key words:

Microelectronics, drive, 1200v, sic, high temperature, dc, loss, application, voltage, high frequency

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