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HJ3DD4C(NPN) low-frequency power transistor

HJ3DD4C(NPN)/ HJ3CD4C(PNP)晶体管主要用于音频功率放大,大负载驱动电路,中大容量,开关电路,自动控制电路等,主要特点有反向漏电小、饱和压降小等。

The category: N-P-N Triode



Product overview

主要特点有反向漏电小、饱和压降小等。

Keyword:
大功率
主要特点
饱和
漏电
反向


HJ3DD4C(NPN) low-frequency power transistor

HJ3DD4C(NPN)/ HJ3CD4C(PNP)晶体管主要用于音频功率放大,大负载驱动电路,中大容量,开关电路,自动控制电路等,主要特点有反向漏电小、饱和压降小等。
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Product serial number
Model:
HJ3DD4C
Key parameter:
fT:28MHz
Driver persistent current (IC/A):
3
Breakdown voltage (VCEO/V):
150
Operating Temperature (TA/℃):
-55~+125
Package:
F1
Profile:

HJ3DD4C(NPN)晶体管主要用于音频功率放大,大负载驱动电路,中大容量,开关电路,自动控制电路等

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Keyword:
大功率
主要特点
饱和
漏电
反向
1
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主要特点有反向漏电小、饱和压降小等。

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HJ3DD4C(NPN) low-frequency power transistor
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