产品&服务
- Picture
- Name
- Model
- Profile
- Key parameter
- Driver persistent current (IC/A)
- Breakdown voltage (VCEO/V)
- Operating Temperature (TA/℃)
- Package
- Attachment
-
- HJ3CK109 PNPPNP high frequency high power switching transistor
- Model HJ3CK109
- Profile HJ3CK109是PNP型硅外延平面高频大功率开关晶体管
- Key parameter fT:4MHz
- Driver persistent current (IC/A) 16
- Breakdown voltage (VCEO/V) 250
- Operating Temperature (TA/℃) -55～+125
- Package F2
-
- HJ727PNP High Temperature darlington transistor
- Model HJ727
- Profile HJ727是PNP型高温中功率达林顿晶体管
- Key parameter VCE(SAT):2V
- Driver persistent current (IC/A) 5
- Breakdown voltage (VCEO/V) 100
- Operating Temperature (TA/℃) -55～+125
- Package -55～+125 TO-257
-
- HJ2SB688(PNP) bipolar transistor
- Model HJ2SB688
- Profile HJ2SD718(NPN)/ HJ2SB688(PNP)晶体管主要用于音频功率放大，大负载驱动电路，中大容量，开关电路，自动控制电路等
- Key parameter fT:10MHz
- Driver persistent current (IC/A) -0.5
- Breakdown voltage (VCEO/V) -120
- Operating Temperature (TA/℃) -55～+125
- Package B-3D
-
- HJBD138(PNP) Small signal amplifier transistor
- Model HJBD138
- Profile /HJBD138(PNP)是小信号放大器晶体管
- Key parameter fT:60MHz
- Driver persistent current (IC/A) 2
- Breakdown voltage (VCEO/V) 60
- Operating Temperature (TA/℃) -55～+125
- Package B-3D、TO-46
-
- HJ42C(PNP) low-frequency power transistor
- Model HJ42C
- Profile HJ42C(PNP)晶体管主要用于音频功率放大，大负载驱动电路，中大容量，开关电路，自动控制电路等
- Key parameter fT:3MHz
- Driver persistent current (IC/A) -6
- Breakdown voltage (VCEO/V) -100
- Operating Temperature (TA/℃) -55～+125
- Package F1
-
- HJ3CD4C(PNP) low-frequency power transistor
- Model HJ3CD4C
- Profile HJ3CD4C(PNP)晶体管主要用于音频功率放大，大负载驱动电路，中大容量，开关电路，自动控制电路等
- Key parameter fT:25MHz
- Driver persistent current (IC/A) -3
- Breakdown voltage (VCEO/V) -150
- Operating Temperature (TA/℃) -55～+125
- Package F1
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