• Picture
• Name
• Model
• Profile
• Key parameter
• Driver persistent current (IC/A)
• Breakdown voltage (VCEO/V)
• Operating Temperature (TA/℃)
• Package
• Attachment

• 
• HJ5210 High temperature P-groove enhanced power MOSFET
• Model HJ5210
• Profile HJ5210具有开关速度快、导通电阻低、电流能力强、栅电容小、使用环境温度高等特点
• Key parameter Ron:60mΩ
• Driver persistent current (IC/A) -40
• Breakdown voltage (VCEO/V) -100
• Operating Temperature (TA/℃) -55～+125
• Package TO-257

• 
• HJ9435 High temperature P-groove enhanced power MOSFET
• Model HJ9435
• Profile HJ9435具有开关速度快、导通电阻低、电流能力强、栅电容小、使用环境温度高等特点
• Key parameter Ron:80mΩ
• Driver persistent current (IC/A) -5.3
• Breakdown voltage (VCEO/V) 36
• Operating Temperature (TA/℃) -55～+125
• Package TO-257

• 
• HJ1200-080 Sic MOSFET
• Model HJ1200-080
• Profile HJ1200-080Sic MOSFET是采用Sic工艺实现的一款耐高温功率器件。
• Key parameter Ron:80mΩ
• Driver persistent current (IC/A) 25
• Breakdown voltage (VCEO/V) 1200
• Operating Temperature (TA/℃) -55～+125
• Package TO-258

• 
• HJ540 Sic MOSFET
• Model HJ540
• Profile HJ540 是由先进工艺制成的NMOSFET功率晶体管
• Key parameter Ron:90mΩ
• Driver persistent current (IC/A) 28
• Breakdown voltage (VCEO/V) 100
• Operating Temperature (TA/℃) -55～+125
• Package TO-257

• 
• HJ8736 N-MOSFET
• Model HJ8736
• Profile HJ8736具有导通电阻低、电流能力强特点
• Key parameter Ron:0.2mΩ
• Driver persistent current (IC/A) 18
• Breakdown voltage (VCEO/V) 65
• Operating Temperature (TA/℃) -55～+125
• Package CSOP08B

• 
• HJ190KT2/MXT190KT2Four PMOS switch
• Model HJ190KT
• Profile 该电路与俄罗斯190KT2电路完全兼容，可直接代换使用。
• Key parameter Ron:50Ω
• Driver persistent current (IC/A) 0.2
• Breakdown voltage (VCEO/V) -45
• Operating Temperature (TA/℃) -55～+125
• Package F14-01C

• 
• HJ622A /MXT622A PNP transistor array
• Model HJ622A
• Profile HJ622A / MXT622A是三极管阵列集成电路
• Key parameter fT:200MHz
• Driver persistent current (IC/A) 0.4
• Breakdown voltage (VCEO/V) -45
• Operating Temperature (TA/℃) -55～+125
• Package F14-01B

• 
• HJ198P high temperature five PNP transistor array
• Model HJ198P
• Profile HJ198P是由五个PNP硅晶体管组成的三极管阵列集成电路。
• Key parameter fT:200MHz
• Driver persistent current (IC/A) 0.4
• Breakdown voltage (VCEO/V) 45
• Operating Temperature (TA/℃) -55～+125
• Package F16-01C

• 
• HJ251A/MXT251A NPN transistor array
• Model HJ251A
• Profile HJ251A/ MXT251A是三极管阵列集成电路
• Key parameter fT:250MHz
• Driver persistent current (IC/A) 0.4
• Breakdown voltage (VCEO/V) 50
• Operating Temperature (TA/℃) -55～+125
• Package F14-01B

• 
• HJ2803J high current eight darlinton
• Model HJ2803J
• Profile HJ2803J是高压大电流达林顿阵列，由八个共发射极达林顿管组成。
• Key parameter IOD:50μA
• Driver persistent current (IC/A) 0.5
• Breakdown voltage (VCEO/V) 50
• Operating Temperature (TA/℃) -55～+125
• Package J18S2、CSOP18-02

• 
• HJ2004 Seven DARLINTON
• Model HJ2004
• Profile HJ2004是高压大电流达林顿阵列，由七个共发射极的达林顿管组成。
• Key parameter IOD:50μA
• Driver persistent current (IC/A) 0.3
• Breakdown voltage (VCEO/V) 50
• Operating Temperature (TA/℃) -55～+125
• Package J16S2、H16-02、F16-01

• 
• HJ2003 Seven DARLINTON
• Model HJ2003
• Profile HJ2003是高压大电流达林顿阵列，由七个共发射极的达林顿管组成。
• Key parameter IOD:50μA
• Driver persistent current (IC/A) 0.3
• Breakdown voltage (VCEO/V) 50
• Operating Temperature (TA/℃) -55～+125
• Package J16S2、H16-02、F16-01

• 
• HJ569 High temperature four-chanal magnetic latching relay drive circuit
• Model HJ569
• Profile HJ569是一款四路磁保持继电器驱动电路
• Key parameter VO(SAT):0.15V
• Driver persistent current (IC/A) 1
• Breakdown voltage (VCEO/V) 75
• Operating Temperature (TA/℃) -55～+125
• Package F14-02

• 
• HJ269A/ HJ269B/ HJ269C/ HJ269D Four double redundant output drive circuit
• Model HJ269
• Profile HJ269用于发送指令的输出电路，能够驱动继电器或大电流感性负载。
• Key parameter IOD:50μA
• Driver persistent current (IC/A) 0.2
• Breakdown voltage (VCEO/V) 50
• Operating Temperature (TA/℃) -55～+125
• Package HD14-02A

• 
• HJ169 Four double redundant output drive circuit
• Model HJ169
• Profile HJ169用于发送指令的输出电路，能够驱动继电器或大电流感性负载。
• Key parameter VCE(SAT):0.3V IOD:20μA
• Driver persistent current (IC/A) 0.2
• Breakdown voltage (VCEO/V) 50
• Operating Temperature (TA/℃) -55～+125
• Package MP-14b